The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2026
Filed:
May. 31, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yu-Der Chih, Hsinchu City, TW;
Ya-Chin King, Hsinchu City, TW;
Chrong Lin, Hsinchu City, TW;
Jonathan Tsung-Yung Chang, Hsinchu City, TW;
Yun-Sheng Chen, Hsinchu City, TW;
May-Be Chen, Hsinchu City, TW;
Hsin-Yuan Yu, Hsinchu City, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A memory device is disclosed. The memory device includes a memory cell comprising: a transistor; and a plurality of pairs of resistors coupled to the transistor in series, each of the pairs of resistors including a first resistor and a second resistor. The transistor is formed along a major surface of a substrate. At least a first one of the pairs of resistors are formed in a first one of a plurality of metallization layers disposed above the transistor. At least a second one of the pairs of resistors are formed in a second one of the plurality of metallization layers, the second metallization layer being disposed above the first metallization layer.