The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2023
Filed:
Jun. 17, 2021
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H10B 41/10 (2023.01); H10B 41/35 (2023.01); H10B 41/40 (2023.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7883 (2013.01); H01L 29/7881 (2013.01); H10B 41/10 (2023.02); H10B 41/35 (2023.02); H10B 41/40 (2023.02); H01L 29/785 (2013.01);
Abstract
A non-volatile memory cell is described. The non-volatile memory cell includes a substrate, insulators, a floating gate and a control gate. The substrate has a first fin and a second fin, wherein the second fin is located at a first side of the first fin and a conductive type of the second fin is different from that of the first fin. The insulators are located over the substrate, wherein the first fin and the second fin are respectively located between the insulators. The floating gate is located over the first fin, the insulators and the second fin. The control gate includes the second fin.