The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2024

Filed:

Jul. 18, 2022
Applicant:

National Tsing Hua University, Hsinchu, TW;

Inventors:

Ya-Chin King, Hsinchu, TW;

Chrong-Jung Lin, Hsinchu, TW;

Yao-Hung Huang, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 17/00 (2006.01); G11C 17/16 (2006.01); H01L 23/522 (2006.01); H01L 23/525 (2006.01); H10B 20/20 (2023.01);
U.S. Cl.
CPC ...
G11C 17/16 (2013.01); H01L 23/5226 (2013.01); H01L 23/5256 (2013.01); H10B 20/20 (2023.02);
Abstract

A low voltage one-time-programmable memory includes a first conductive layer, a first via, a second conductive layer, a select transistor, a second via and a third conductive layer. The first via is electrically connected to the first conductive layer. The second conductive layer is electrically connected to the first via. The select transistor is electrically connected to the second conductive layer. The second via is electrically connected to the second conductive layer. The third conductive layer is electrically connected to the second via. A first current passed through the second via is a sum of a second current passed through the first via and a third current passed through the select transistor.


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