The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2022

Filed:

Sep. 26, 2019
Applicant:

National Tsing Hua University, Hsinchu, TW;

Inventors:

Burn-Jeng Lin, Hsinchu, TW;

Chrong-Jung Lin, Hsinchu, TW;

Ya-Chin King, Hsinchu, TW;

Yi-Pei Tsai, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/66 (2006.01); H01L 29/78 (2006.01); H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
H01L 22/14 (2013.01); H01L 22/30 (2013.01); H01L 29/785 (2013.01); H01L 29/788 (2013.01); H01L 29/7831 (2013.01);
Abstract

A micro detector includes a substrate, a fin structure, a floating gate, a sensing gate, a reading gate and an antenna layer. The fin structure is located on the substrate. The floating gate is located on the substrate, and the floating gate is vertically and crossly arranged with the fin structure. The sensing gate is located at one side of the fin structure. The reading gate is located at the other side of the fin structure. The antenna layer is located on the sensing gate and is connected with the sensing gate. An induced charge is generated when the antenna layer is contacted with an external energy source, and the induced charge is stored in the floating gate.


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