Average Co-Inventor Count = 4.3

ph-index = 5

Forward Citations = 85(Granted Patents)

Location History:

Highland, NY (US) (2006)
Schenectady, NY (US) (2017)
Newburgh, NY (US) (2008 - 2018)

Company Filing History:

10 out of 164,108

International Business Machines Corporation

patents

2 out of 131,214

Samsung Electronics Co., Ltd.

patents

2 out of 962

Chartered Semiconductor Manufacturing Ltd (corporation)

The State University of New York

patents

6. 1 out of 5,491

Freescale Semiconductor,inc.

patents

where one patent can have more than one assignee

Years Active: 2006-2018

where 'Filed Patents' based on already Granted Patents

14 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 9874693 - Method and structure for integrating photonics with CMOs (2018-01-23),

2. 9754071 - Integrated circuit (IC) design analysis and feature extraction (2017-09-05),

3. 9431289 - Method and structure to reduce FET threshold voltage shift due to oxygen diffusion (2016-08-30),

4. 9093495 - Method and structure to reduce FET threshold voltage shift due to oxygen diffusion (2015-07-28),

5. 9034748 - Process variability tolerant hard mask for replacement metal gate finFET devices (2015-05-19),

6. 8704332 - Metal oxide semiconductor field effect transistor (MOSFET) gate termination (2014-04-22),

7. 8629028 - Metal oxide semiconductor field effect transistor (MOSFET) gate termination (2014-01-14),

8. 8461009 - Spacer and process to enhance the strain in the channel with stress liner (2013-06-11),

9. 8053301 - CMOS SiGe channel pFET and Si channel nFET devices with minimal STI recess (2011-11-08),

10. 7883953 - Method for transistor fabrication with optimized performance (2011-02-08),

11. 7531401 - Method for improved fabrication of a semiconductor using a stress proximity technique process (2009-05-12),

12. 7521308 - Dual layer stress liner for MOSFETS (2009-04-21),

13. 7471548 - Structure of static random access memory with stress engineering for stability (2008-12-30),

14. 7081397 - Trench sidewall passivation for lateral RIE in a selective silicon-on-insulator process flow (2006-07-25),

Title: An Overview of Inventor Christopher V Baiocco

Introduction

Christopher V Baiocco is an accomplished inventor based in Schenectady, New York, known for his innovative contributions to the semiconductor and photonics industries. With a commendable portfolio of 14 patents, Baiocco has made significant strides in enhancing integrated circuit designs and photonic integration.

Latest Patents

Among his most recent innovations, Baiocco filed patents concerning a "Method and structure for integrating photonics with CMOS." This technology involves semiconductor structures that incorporate active device regions, featuring field-effect transistors (FETs) and photonic devices with integrated waveguides. Another notable patent is focused on "Integrated circuit (IC) design analysis and feature extraction." This patent outlines various methods for assessing IC designs against multiple failure modes, enhancing reliability and performance through defined extraction parameters and normalized equations for failure correlations.

Career Highlights

Baiocco has had a distinguished career, contributing his expertise to renowned companies such as IBM and Samsung Electronics Co., Ltd. His work has significantly influenced advancements in semiconductor technology, particularly in integrating photonics with traditional electronic components.

Collaborations

Throughout his career, Christopher V Baiocco has collaborated with notable professionals, including Xiangdong Chen and Daniel J Jaeger. Their combined expertise has fostered innovative approaches in electronic and photonic design, paving the way for new technological advancements.

Conclusion

In conclusion, Christopher V Baiocco’s inventive contributions, underscored by his 14 patents, illustrate his pivotal role in the realms of semiconductor innovations and photonics. His collaborations and work with leading companies highlight his commitment to driving progress in technology, establishing him as a prominent figure in contemporary invention.

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