The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 23, 2018

Filed:

Jun. 10, 2015
Applicants:

Christopher Baiocco, Newburgh, NY (US);

Douglas Coolbaugh, Highland, NY (US);

Gerald Leake, Clifton Park, NY (US);

Inventors:

Christopher Baiocco, Newburgh, NY (US);

Douglas Coolbaugh, Highland, NY (US);

Gerald Leake, Clifton Park, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/12 (2006.01); G02B 6/13 (2006.01); G02B 6/134 (2006.01); H01L 21/762 (2006.01); G02B 6/124 (2006.01); G02B 6/136 (2006.01); H01L 21/265 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
G02B 6/13 (2013.01); G02B 6/12004 (2013.01); G02B 6/1347 (2013.01); H01L 21/762 (2013.01); G02B 6/124 (2013.01); G02B 6/136 (2013.01); G02B 2006/121 (2013.01); G02B 2006/12169 (2013.01); H01L 21/26506 (2013.01); H01L 29/665 (2013.01); H01L 29/6656 (2013.01); H01L 29/6659 (2013.01); H01L 29/66537 (2013.01); H01L 29/7833 (2013.01);
Abstract

A semiconductor structure can include an active device FET region having a FET and a photonics region having a photonic device including a waveguide. A semiconductor structure can include an active device FET region having a FET and a trench isolation region having a photonic device that includes a waveguide. A method can include forming a FET at an active device FET region of a semiconductor structure. A method can include forming a photonic device at a trench isolation region of a semiconductor structure.


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