The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2015

Filed:

Sep. 04, 2013
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Christopher V. Baiocco, Newburgh, NY (US);

Kevin K. Chan, Staten Island, NY (US);

Young-Hee Kim, Mohegan Lake, NY (US);

Masaharu Kobayashi, Yorktown Heights, NY (US);

Effendi Leobandung, Stormville, NY (US);

Fei Liu, Yorktown Heights, NY (US);

Dae-Gyu Park, Poughquaq, NY (US);

Helen Wang, LaGrangeville, NY (US);

Xinhui Wang, Poughkeepsie, NY (US);

Min Yang, Yorktown Heights, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 21/033 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28132 (2013.01); H01L 29/6681 (2013.01); H01L 21/0332 (2013.01); H01L 21/32139 (2013.01); Y10S 438/95 (2013.01);
Abstract

Embodiments include a method comprising depositing a hard mask layer over a first layer, the hard mask layer including; lower hard mask layer, hard mask stop layer, and upper hard mask. The hard mask layer and the first layer are patterned and a spacer deposited on the patterned sidewall. The upper hard mask layer and top portion of the spacer are removed by selective etching with respect to the hard mask stop layer, the remaining spacer material extending to a first predetermined position on the sidewall. The hard mask stop layer is removed by selective etching with respect to the lower hard mask layer and spacer. The first hard mask layer and top portion of the spacer are removed by selectively etching the lower hard mask layer and the spacer with respect to the first layer, the remaining spacer material extending to a second predetermined position on the sidewall.


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