The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2009
Filed:
Feb. 08, 2007
Christopher Vincent Baiocco, Newburgh, NY (US);
Xiangdong Chen, Poughquag, NY (US);
Wenzhi Gao, Singapore, SG;
Young Gun Ko, Yongin, KR;
Young Way Teh, Singapore, SG;
Christopher Vincent Baiocco, Newburgh, NY (US);
Xiangdong Chen, Poughquag, NY (US);
Wenzhi Gao, Singapore, SG;
Young Gun Ko, Yongin, KR;
Young Way Teh, Singapore, SG;
International Business Machines Corporation, Armonk, NY (US);
Chartered Semiconductor Manufacturing, Ltd., Singapore, SG;
Abstract
An improved method for applying stress proximity technique process on a semiconductor device and the improved device is disclosed. In one embodiment, the method utilizes an additional set of sidewall spacers on one or more NFET devices during the fabrication process. This protects the one or more of the NFET devices during the activation of a compressive PFET stress liner, thereby reducing the compressive forces on the one or more NFET devices, and creating a semiconductor device with improved performance.