The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2013
Filed:
Feb. 28, 2006
Atul C. Ajmera, Wappingers Falls, NY (US);
Christopher V. Baiocco, Newburgh, NY (US);
Xiangdong Chen, Poughquag, NY (US);
Wenzhi Gao, Beacon, NY (US);
Young Way Teh, Singapore, MY;
Atul C. Ajmera, Wappingers Falls, NY (US);
Christopher V. Baiocco, Newburgh, NY (US);
Xiangdong Chen, Poughquag, NY (US);
Wenzhi Gao, Beacon, NY (US);
Young Way Teh, Singapore, MY;
International Business Machines Corporation, Armonk, NY (US);
Chartered Semiconductor Manufacturing Ltd., Singapore, MY;
Abstract
Process for enhancing strain in a channel with a stress liner, spacer, process for forming integrated circuit and integrated circuit. A first spacer composed of an first oxide and first nitride layer is applied to a gate electrode on a substrate, and a second spacer composed of a second oxide and second nitride layer is applied. Deep implanting of source and drain in the substrate occurs, and removal of the second nitride, second oxide, and first nitride layers.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile