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For the Inventor, By the Inventor

Jhubei, Taiwan

Bo-Jiun Lin

This inventor holds 25 USPTO granted patents and 18 published patent applications, primarily in Semiconductor Fabrication. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2014-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Bo-Jiun Lin. Retrieved from https://idiyas.com/inventor/bo-jiun-lin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 25 

% Patents Active = 88.0

Average Co-Inventor Count = 3.4

ph-index = 4

Forward Citations = 93(Granted Patents)


Location History:

  • Jhubei, TW (2014 - 2023)
  • Hsinchu County, TW (2017 - 2024)

Company Filing History:

goldMedal25 out of 42,965 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2014-2026

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Areas of Expertise:
Semiconductor Device
Interconnect Structure
Low-K Materials
Memory Cell
Porous Structures
Hafnium Dielectric
Gap Filling Material
Integrated Circuit
Dark Field Inspection
Flexible Dielectric
Mechanical Strength Additives
25 patents (USPTO):Explore Patents
1. 12772457 - Semiconductor device with ferroelectric layer and method of forming the same (2026-10-20),
2. 12745574 - Semiconductor device, memory cell and method of forming the same (2026-09-22),
3. 12684856 - Semiconductor device with compositionally varied hafnium-containing dielectric layers and fabrication method thereof (2026-07-14),
4. 12660254 - Semiconductor device and method of fabricating a semiconductor device (2026-06-16),
5. 12327792 - Semiconductor structure and manufacturing methods thereof (2025-06-10),
6. 12300486 - System and method of forming a porous low-k structure (2025-05-13),
7. 12249574 - Interconnect structure of semiconductor device and method of forming same (2025-03-11),
8. 12142521 - Interconnect structure and semiconductor device having the same (2024-11-12),
9. 12094771 - Interconnect structure and method (2024-09-17),
10. 11984316 - Porogen bonded gap filling material in semiconductor manufacturing (2024-05-14),
11. 11957070 - Semiconductor device, memory cell and method of forming the same (2024-04-09),
12. 11658120 - Porogen bonded gap filling material in semiconductor manufacturing (2023-05-23),
13. 11637010 - System and method of forming a porous low-k structure (2023-04-25),
14. 11456211 - Method of forming interconnect structure (2022-09-27),
15. 11450563 - Interconnect structure and method (2022-09-20),

Title: The Innovative Journey of Bo-Jiun Lin

Introduction: Bo-Jiun Lin, a talented inventor hailing from Jhubei, Taiwan, has made significant contributions to the field of technology with his groundbreaking inventions.

Latest Patents: Bo-Jiun Lin's latest patents showcase his ingenuity and forward-thinking approach to innovation, solidifying his position as a leading figure in the industry.

Career Highlights: Throughout his illustrious career, Bo-Jiun Lin has consistently pushed the boundaries of what is possible, with a keen focus on developing solutions that have a real-world impact. His dedication to innovation has earned him recognition and respect from his peers.

Collaborations: Bo-Jiun Lin has collaborated with top research institutions, universities, and companies to further his research and bring his inventions to life. His ability to work effectively in a team setting has led to the successful development of cutting-edge technologies.

Conclusion: Bo-Jiun Lin's passion for innovation, coupled with his exceptional talent, has cemented his legacy as a pioneering inventor in the field of technology. His relentless pursuit of excellence continues to inspire future generations of inventors to push the boundaries of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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