The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2024
Filed:
Aug. 06, 2021
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Tung-Ying Lee, Hsinchu, TW;
Bo-Jiun Lin, Hsinchu County, TW;
Shao-Ming Yu, Hsinchu County, TW;
Yu-Chao Lin, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); H01L 23/528 (2006.01); H10B 63/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10N 70/826 (2023.02); H01L 23/5283 (2013.01); H10B 63/80 (2023.02); H10N 70/061 (2023.02); H10N 70/231 (2023.02); H10N 70/841 (2023.02);
Abstract
A memory cell includes a memory device, a connecting structure, an insulating layer and a selector. The connecting structure is disposed on and electrically connected to the memory device. The insulating layer covers the memory device and the connecting structure. The selector is located on and electrically connected to the memory device, where the selector is disposed on the insulating layer and connected to the connecting structure by penetrating through the insulating layer.