The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Jul. 21, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Bo-Jiun Lin, Hsinchu County, TW;
Chih-Sheng Chang, Hsinchu, TW;
Yu-Chao Lin, Hsinchu City, TW;
Tung-Ying Lee, Hsinchu City, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A method of forming a semiconductor device is provided. A first ferroelectric inducing layer including Ru is deposited on a substrate. A ferroelectric layer including HfZrO is deposited on the first ferroelectric inducing layer. A second ferroelectric inducing layer including Ru is deposited on the ferroelectric layer, wherein the HfZrO of the ferroelectric layer is in physical contact with the Ru of the first ferroelectric inducing layer and the Ru of the second ferroelectric inducing layer. The second ferroelectric inducing layer, the ferroelectric layer and the first ferroelectric inducing layer are patterned.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile