The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 10, 2025

Filed:

Jan. 21, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Bo-Jiun Lin, Hsinchu County, TW;

Tung-Ying Lee, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53223 (2013.01); H01L 21/7685 (2013.01); H01L 21/76864 (2013.01); H01L 23/5226 (2013.01); H01L 23/53238 (2013.01); H01L 21/76846 (2013.01);
Abstract

A semiconductor structure includes a substrate and an interconnect. The substrate has a semiconductor device. The interconnect is disposed over the substrate and electrically coupled to the semiconductor device, and includes a metallization layer and a capping layer. The metallization layer is disposed over the substrate and includes a via portion and a line portion connecting to the via portion. The capping layer covers the line portion, where the line portion is sandwiched between the via portion and the capping layer, and the capping layer includes a plurality of sub-layers.


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