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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11984316 B1

PDFFull Text
Date of Patent:
May. 14, 2024

Filed:

May. 22, 2023

Porogen bonded gap filling material in semiconductor manufacturing

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Bo-Jiun Lin, Hsinchu County, TW;

Ching-Yu Chang, Hsin-Chu, TW;

Hai-Ching Chen, Hsinchu, TW;

Tien-I Bao, Taoyuan County, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Haynes and Boone, LLP

Primary Examiner:

Shouxiang Hu

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 23/31 (2006.01); H01L 23/485 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 23/58 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02203 (2013.01); H01L 21/02126 (2013.01); H01L 21/02216 (2013.01); H01L 21/02282 (2013.01); H01L 21/7682 (2013.01); H01L 21/76837 (2013.01); H01L 23/3178 (2013.01); H01L 23/3185 (2013.01); H01L 23/485 (2013.01); H01L 23/522 (2013.01); H01L 23/528 (2013.01); H01L 23/5329 (2013.01); H01L 23/53295 (2013.01); H01L 23/585 (2013.01); H01L 29/0642 (2013.01); H01L 29/0649 (2013.01); H01L 2221/1047 (2013.01);
Abstract

A device includes a substrate; a first layer over the substrate, the first layer containing a plurality of fin features and a trench between two adjacent fin features. The device also includes a porous material layer having a first portion and a second portion. The first portion is disposed in the trench. The second portion is disposed on a top surface of the first layer. The first and the second portions contain substantially same percentage of Si, substantially same percentage of O, and substantially same percentage of C.

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