The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2025
Filed:
Jan. 14, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Tung Ying Lee, Hsinchu, TW;
Bo-Jiun Lin, Jhubei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/768 (2006.01); H01L 23/52 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/76843 (2013.01); H01L 21/76877 (2013.01); H01L 23/53238 (2013.01); H01L 23/53266 (2013.01);
Abstract
A device includes a substrate, a dielectric layer over the substrate, and a conductive interconnect in the dielectric layer. The conductive interconnect includes a barrier/adhesion layer and a conductive layer over the barrier/adhesion layer. The barrier/adhesion layer includes a material having a chemical formula MX, with M being a transition metal element, X being a chalcogen element, and n being between 0.5 and 2.