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Erfurt, Germany

X-Fab Semiconductor Foundries Gmbh

USPTO Granted Patents = 34

EPO Patents = 3

Trademarks = 1

Forward Citations = 7

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50 inventors (with patents filed for the assignee):

Ralf Lerner (7 out of 29 patents)

Daniel Gäbler (6 out of 12 patents)

Roy Knechtel (3 out of 7 patents)

4. Peter Hofmann (3 out of 5 patents)

5. Matthias Krojer (3 out of 3 patents)

6. Victor Sizov (2 out of 5 patents)

7. Manoj Chandrika Reghunathan (2 out of 2 patents)

8. Sophia Dempwolf (2 out of 2 patents)

9. Daniela Guenther (2 out of 2 patents)

10. Uwe Schwarz (2 out of 2 patents)

11. Daniel Gaebler (2 out of 2 patents)

12. Eng Gek Hee (2 out of 4 patents)

13. Alexander Zimmer (2 out of 5 patents)

14. Stefan Weinberger (1 out of 1 patent)

15. Peter Tilo (1 out of 1 patent)

Core Competencies:

III-nitride Epitaxy

Trench Insulation Structure

CMOS Wavefront Sensors

Through Silicon Via

Single Photon Avalanche Diode

Field-Effect Transistor

ESD-Protection Device

Optical Sensors

Flash Memory

Thermopile Test Structure

Integrated Circuit

Anti-Reflective Layers

34 patents: Sort by Forward Citations

1. 12331426 - Substrates for III-nitride epitaxy (2025-06-17),

2. 11916104 - Trench insulation structure with enlarged electrically conductive side wall (2024-02-27),

3. 11829074 - Geometrically shaped components in an assembly for a transfer print and associated methods (2023-11-28),

4. 11804505 - CMOS wavefront sensors (2023-10-31),

5. 11795051 - Through silicon via and redistribution layer (2023-10-24),

6. 11575061 - Single photon avalanche diode devices (2023-02-07),

7. 11545569 - Method of fabricating a field-effect transistor (2023-01-03),

8. 11469222 - ESD-protection device and MOS-transistor having at least one integrated ESD-protection device (2022-10-11),

9. 11437266 - Method of manufacturing semiconductor devices to increase yield in micro-transfer printing (2022-09-06),

10. 11417757 - Ohmic contacts in semiconductor devices (2022-08-16),

11. 11404461 - Anti-reflective layers in semiconductor devices (2022-08-02),

12. 11398452 - Anodic bonding of a substrate of glass having contact vias to a substrate of silicon (2022-07-26),

13. 11355582 - Trench insulation structure with enlarged electrically conductive side wall (2022-06-07),

14. 11276787 - Semiconductor device for light detection (2022-03-15),

15. 11177410 - Electrically modulated IR sensitive photodiode and its integration in CMOS (2021-11-16),

Company Overview

X-Fab Semiconductor Foundries GmbH is a leading provider of analog and mixed-signal semiconductor solutions, specializing in the development and manufacturing of integrated circuits. The company focuses on a diverse range of applications, including automotive, industrial, and medical sectors, leveraging advanced technologies to deliver high-quality, reliable products. With its headquarters in Erfurt, Germany, X-Fab operates multiple fabrication facilities, ensuring a robust supply chain and innovative capabilities to meet the evolving demands of the semiconductor market.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 20 2026

34 Patents

#2 in Erfurt

#1,454 in Germany

#19,651 in the World

Erfurt, Germany

X-Fab Semiconductor Foundries Gmbh

Forward Citations = 7

50 inventors:

Ralf Lerner (7 out of 29 patents)

Daniel Gäbler (6 out of 12 patents)

Roy Knechtel (3 out of 7 patents)

4. Peter Hofmann (3 out of 5 patents)

5. Matthias Krojer (3 out of 3 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: X-Fab Semiconductor Foundries Gmbh. Retrieved from https://idiyas.com/company/x-fab-semiconductor-foundries

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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