The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 2024

Filed:

Jun. 01, 2022
Applicant:

X-fab Semiconductor Foundries Gmbh, Erfurt, DE;

Inventor:

Ralf Lerner, Erfurt, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/762 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 21/76237 (2013.01); H01L 21/76224 (2013.01); H01L 23/5225 (2013.01);
Abstract

A semiconductor device may include a first active component region () and a second active region () extending flat along a first lateral direction (L) and a second lateral direction (L) deviating from said first lateral direction. The semiconductor device may include a trench isolation structure (′) that electrically isolates the first active component region () from the second active region () along the first lateral direction (L) and comprises at least one electrically conductive sidewall (″); said trench isolation structure () having a continuously extending insulating trench isolation base wall () and a plurality of spaced apart trench isolation portions () with electrically conductive sidewall portions () therebetween. The plurality of trench isolation portions () and the electrically conductive sidewall portions () are spaced (a, b) from the base wall ().


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