The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2022
Filed:
Jan. 18, 2019
Applicant:
Victor Sizov, Dresden, DE;
Inventor:
Victor Sizov, Dresden, DE;
Assignee:
X-FAB SEMICONDUCTOR FOUNDRIES GMBH, Erfurt, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 29/417 (2006.01); H01L 29/40 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7786 (2013.01); H01L 21/28575 (2013.01); H01L 29/2003 (2013.01); H01L 29/401 (2013.01); H01L 29/41758 (2013.01); H01L 29/452 (2013.01); H01L 29/66462 (2013.01); H01L 29/41766 (2013.01);
Abstract
A semiconductor arrangement including a substrate, a dielectric layer, and a semiconductor layer disposed between the substrate and the dielectric layer. The arrangement further includes an ohmic contact including a plurality of metal contact fragments located in a plurality of trenches formed in the dielectric layer, and a metallic connector layer electrically connecting the metal contact fragments. The ohmic contact electrically connects the metallic connector layer to the semiconductor layer.