Peter Hofmann

Title: The Innovative Contributions of Peter Hofmann

Introduction

Peter Hofmann is a notable inventor based in Radeberg, Germany. He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of field-effect transistors. With a total of five patents to his name, Hofmann's work has had a considerable impact on the industry.

Latest Patents

Hofmann's latest patents include a method of fabricating a field-effect transistor. This method involves providing a substrate and forming a first well of a first doping polarity type in the substrate. A gate is formed on a portion of the first well, which includes an oxide layer and an at least partially conductive layer. The process also includes forming a mask on the gate and the first well, with the mask featuring a sloping edge. Additionally, a second well of a second doping polarity type is formed by implanting ions in the first well, extending under a portion of the gate. This innovative method defines a channel of the transistor under the gate, showcasing Hofmann's expertise in semiconductor fabrication.

Career Highlights

Throughout his career, Hofmann has worked with prominent companies in the semiconductor industry, including X-Fab Semiconductor Foundries GmbH and Melexis Technologies NV. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking advancements in technology.

Collaborations

Hofmann has collaborated with talented individuals such as Christian Schott and Manoj Chandrika Reghunathan. These partnerships have fostered an environment of innovation and creativity, further enhancing the quality of his work.

Conclusion

Peter Hofmann's contributions to the field of semiconductor technology are noteworthy. His innovative methods and collaborations have significantly advanced the fabrication of field-effect transistors. His work continues to influence the industry and inspire future innovations.