The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2021
Filed:
Jun. 05, 2018
X-fab Semiconductor Foundries Ag, Erfurt, DE;
Manoj Chandrika Reghunathan, Kuching, MY;
Peter Hofmann, Radeberg, DE;
X-FAB SEMICONDUCTOR FOUNDRIES GMBH, Erfurt, DE;
Abstract
Methods of fabricating a field-effect transistor, where the methods include providing a substrate, forming a first well of a first doping polarity type in the substrate, and forming a gate on a portion of the first well, the gate comprising an oxide layer and an at least partially conductive layer on the oxide layer. A second well of a second doping polarity type is formed by implanting ions in the first well, the second well extending under a portion of the gate. A first one of a source and drain of the first doping polarity type in or on the second well is formed, thereby defining a channel of the transistor under the gate. A second one of the source and drain of the first doping polarity type in or on the first well is formed. The second well may be formed by means of a two-step implant.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile