The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2022
Filed:
Jun. 25, 2019
Applicant:
Daniel Gäbler, Apolda, DE;
Inventor:
Daniel Gäbler, Apolda, DE;
Assignee:
X-FAB SEMICONDUCTOR FOUNDRIES GMBH, Erfurt, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); G02B 1/11 (2015.01);
U.S. Cl.
CPC ...
H01L 27/1462 (2013.01); G02B 1/11 (2013.01); H01L 27/14643 (2013.01); H01L 27/14685 (2013.01); H01L 27/14689 (2013.01);
Abstract
A Complementary Metal Oxide Semiconductor, CMOS, device for radiation detection. The CMOS device includes a semiconductor diffusion layer having a photodetector region for receiving incident light, and a polysilicon layer having a patterned structure in a region at least partially overlapping the photodetector region. The structure includes a plurality of features being perforations extending through the polysilicon layer or columns of polysilicon, wherein the perforations are filled with, or the columns are surrounded by, a dielectric material.