The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
Aug. 25, 2021
Victor Sizov, Dresden, DE;
Karl-heinz Stegemann, Dresden, DE;
Ronny Mueller-biedermann, Dresden, DE;
Thomas Lindner, Dresden, DE;
Victor Sizov, Dresden, DE;
Karl-Heinz Stegemann, Dresden, DE;
Ronny Mueller-Biedermann, Dresden, DE;
Thomas Lindner, Dresden, DE;
X-FAB SEMICONDUCTOR FOUNDRIES GMBH, Erfurt, DE;
Abstract
A wafer suitable for epitaxial growth of gallium nitride (GaN) in a Metal Oxide Chemical Vapor Deposition (MOCVD) process. The wafer includes a silicon substrate having a front side and a back side and an edge extending between the front side and the back side, the edge including a front bevel surface connected to the front side and a back bevel surface connected to the back side, wherein the silicon substrate comprises an oxygen denuded silicon layer surrounding a core. The wafer further includes a protection layer being a thermally grown silicon oxide (SiO) layer substantially covering the front bevel surface and the back bevel surface of the edge, while leaving at least a central region of the front side of the silicon substrate exposed, for preventing meltback during the MOCVD process.