The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 26, 2022

Filed:

Oct. 15, 2019
Applicant:

X-fab Semiconductor Foundries Gmbh, Erfurt, DE;

Inventors:

Stefan Weinberger, Itzehoe, DE;

Roy Knechtel, Geraberg, DE;

Peter Tilo, Itzehoe, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 23/00 (2006.01); H01L 23/14 (2006.01); H01L 23/15 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 24/83 (2013.01); H01L 23/147 (2013.01); H01L 23/15 (2013.01); H01L 23/49827 (2013.01); H01L 23/49894 (2013.01); H01L 24/32 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32501 (2013.01); H01L 2224/8302 (2013.01); H01L 2224/83203 (2013.01); H01L 2224/83893 (2013.01);
Abstract

Methods for the production of a semiconductor device are disclosed. In one embodiment, a method may include: () mechanically contacting a first substrate () having a semiconductor material to a second substrate () having a bondable passivation material and contact vias () extending through the bondable passivation material; () covering the contact vias () with an at least high-resistance material () on a side facing away from the first substrate (); () applying an electric potential between the at least high-resistance material and the first substrate. The potential has a sufficient level that is functionally sufficient to initiate a bonding process between the bondable passivation material of the second substrate and the semiconductor material of the first substrate.


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