For the Inventor, By the Inventor

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Sunnyvale, CA, United States of America

Vantis Corporation

USPTO Granted Patents = 67

Forward Citations = 1,837

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24 inventors (with patents filed for the assignee):

Bradley A Sharpe-Geisler (35 out of 101 patents)

Om P Agrawal (23 out of 143 patents)

Sunil D Mehta (21 out of 96 patents)

4. Herman M Chang (17 out of 25 patents)

5. Giap H Tran (16 out of 30 patents)

6. Bai Yen Nguyen (14 out of 39 patents)

7. Xiao-yu Li (11 out of 29 patents)

8. Steven J Fong (7 out of 13 patents)

9. Hyeon-Seag Kim (5 out of 5 patents)

10. Christopher O Schmidt (3 out of 9 patents)

11. Jack Tim Wong (3 out of 20 patents)

12. Stewart G Logie (3 out of 19 patents)

13. Xiao-Yu Li (2 out of 2 patents)

14. Brad Sharpe-Geisler (1 out of 30 patents)

15. Minh Van Ngo (1 out of 292 patents)

Core Competencies:

Floating Gate Memory

Non-Volatile Memory

FPGA Integrated Circuits

EEPROM Cell

Programmable Logic Device

High Voltage Switch

Interconnect Network

Variable Grain Architecture

Operational Amplifier

Silicon Nitride Etch Stop

Avalanche Injection Memory

Dual Port SRAM

67 patents: Sort by Forward Citations

1. 6455912 - Process for manufacturing shallow trenches filled with dielectric material having low mechanical stress (2002-09-24),

2. 6424000 - Floating gate memory apparatus and method for selected programming thereof (2002-07-23),

3. 6413826 - Gate insulator process for nanometer MOSFETS (2002-07-02),

4. 6404006 - EEPROM cell with tunneling across entire separated channels (2002-06-11),

5. 6380759 - Variable grain architecture for FPGA integrated circuits (2002-04-30),

6. 6359466 - Circuitry to provide fast carry (2002-03-19),

7. 6353352 - Clock tree topology (2002-03-05),

8. 6351157 - Output buffer for making a high voltage (5.0 volt) compatible input/output in a low voltage (2.5 volt) semiconductor process (2002-02-26),

9. 6326808 - Inversion of product term line before or logic in a programmable logic device (PLD) (2001-12-04),

10. 6326663 - Avalanche injection EEPROM memory cell with P-type control gate (2001-12-04),

11. 6297128 - Process for manufacturing shallow trenches filled with dielectric material having low mechanical stress (2001-10-02),

12. 6294811 - Two transistor EEPROM cell (2001-09-25),

13. 6294810 - EEPROM cell with tunneling at separate edge and channel regions (2001-09-25),

14. 6294809 - Avalanche programmed floating gate memory cell structure with program element in polysilicon (2001-09-25),

15. 6292930 - Methods for configuring FPGA's having variable grain blocks and shared logic for providing time-shared access to interconnect resources (2001-09-18),

Vantis Corporation is a leading global technology company that specializes in providing innovative solutions for businesses. With a strong focus on research and development, Vantis offers a wide range of products and services tailored to meet the unique needs of its clients. From software development and IT consulting to cybersecurity and cloud computing, Vantis delivers cutting-edge solutions that drive growth and optimize business operations. With a dedicated team of experts and a commitment to customer satisfaction, Vantis has established itself as a trusted partner for organizations around the world.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Dec 9 2025

67 Patents

#60 in Sunnyvale, CA

#1,237 in California

#5,219 in US

#10,593 in the World

Sunnyvale, CA, United States of America

Vantis Corporation

Forward Citations = 1,837

24 inventors:

Bradley A Sharpe-Geisler (35 out of 101 patents)

Om P Agrawal (23 out of 143 patents)

Sunil D Mehta (21 out of 96 patents)

4. Herman M Chang (17 out of 25 patents)

5. Giap H Tran (16 out of 30 patents)

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