The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2001
Filed:
Mar. 26, 1999
Xiao-Yu Li, San Jose, CA (US);
Steven J. Fong, Santa Clara, CA (US);
Sunil D. Mehta, San Jose, CA (US);
Vantis Corporation, Sunnyvale, CA (US);
Abstract
A non-volatile memory cell, comprising a semiconductor substrate having a first conductivity type. A control region is formed of said first conductivity type in the substrate and a control region oxide formed over the control region. The cell includes a program element having a first active region of a second conductivity type formed in said substrate, a doped or implanted region adjacent to said first active region, and a gate oxide overlying at least the channel region. An active region oxide covers a portion of the first active region. A floating gate is formed over said semiconductor substrate on said active region oxide and said control region oxide.