San Jose, CA, United States of America

Xiao-yu Li


 

Average Co-Inventor Count = 2.5

ph-index = 14

Forward Citations = 546(Granted Patents)


Company Filing History:


Years Active: 1997-2002

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29 patents (USPTO):Explore Patents

Title: Innovations of Xiao-yu Li: Pioneering Developments in EEPROM Technology

Introduction: Xiao-yu Li is an accomplished inventor based in San Jose, California, with a remarkable portfolio that includes 29 patents. Known for his groundbreaking work in the field of non-volatile memory technology, his inventions have significantly advanced the efficiency and performance of EEPROMs (Electrically Erasable Programmable Read-Only Memory).

Latest Patents: Among Xiao-yu Li's notable innovations, two recent patents stand out. The first, titled "EEPROM having stacked dielectric to increase programming speed," describes a sophisticated EEPROM design incorporating a stacked dielectric tunnel oxide region between a write transistor and a sense transistor. This configuration enhances programming speeds while ensuring adequate data retention, utilizing a thin first dielectric layer alongside a high-K dielectric layer.

The second patent, "Avalanche injection EEPROM memory cell with P-type control gate," outlines a non-volatile memory cell architecture. This design features a semiconductor substrate with a P-type control region and an advanced program element aimed at optimizing performance and reliability. Li's innovative use of control region oxide and floating gate structures marks a significant contribution to memory technology.

Career Highlights: Xiao-yu Li has worked with prominent companies, including Advanced Micro Devices Corporation and Vantis Corporation, where he honed his expertise in semiconductor technology. His contributions have been influential in shaping modern memory solutions, reflecting his deep understanding of the interplay between materials science and electrical engineering.

Collaborations: Throughout his career, Xiao-yu Li has collaborated with several distinguished professionals, including Sunil D. Mehta and Radu M. Barsan. Their collective efforts have led to significant advancements in the design and functionality of innovative memory devices.

Conclusion: Xiao-yu Li's work in the field of EEPROM technology exemplifies the spirit of innovation and collaboration. His patents not only enhance programming speed and efficiency but also play a crucial role in the evolution of memory solutions used across various electronic applications. As technology continues to advance, inventors like Xiao-yu Li will remain at the forefront, driving innovations that shape the future.

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