The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2001
Filed:
Mar. 29, 1999
Applicant:
Inventors:
Christopher O. Schmidt, Sunnyvale, CA (US);
Sunil D. Mehta, San Jose, CA (US);
Xiao-Yu Li, San Jose, CA (US);
Assignee:
Vantis Corporation, Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/9788 ; H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/9788 ; H01L 2/976 ;
Abstract
A nonvolatile memory device utilizing a program junction region of a p-type impurity and oxide grown thereon. In one aspect, the device comprises a programming structure and a program junction separated from said programming structure by a field oxide region. A program junction oxide layer overlies said program junction region. A floating gate is provided over the oxide which covers said programming structure, said program junction oxide layer, and in some embodiments the gate oxide of a sense transistor.