The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2001
Filed:
Nov. 13, 1998
Applicant:
Inventors:
Xiao-Yu Li, San Jose, CA (US);
Sunil D. Mehta, San Jose, CA (US);
Christopher O. Schmidt, Sunnyvale, CA (US);
Robert H. Tu, Sunnyvale, CA (US);
Assignee:
Lattice Semiconductor Corporation, Hillsboro, OR (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ; H01L 2/176 ; H01L 2/1425 ;
U.S. Cl.
CPC ...
H01L 2/1336 ; H01L 2/176 ; H01L 2/1425 ;
Abstract
A method for eliminating source/drain shorting generated during the highly-doped source/drain implant steps in a standard STI process is provided. This is achieved by reducing the RTA temperature to be less than 1000° C. so as to minimize enhanced doping diffusion. Further, the energy level for the highly-doped source/drain implant steps is increased so to compensate for poly depletion in the gate electrodes.