The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2001
Filed:
Feb. 04, 1999
Ting Y. Tsui, Palo Alto, CA (US);
Robert H. Tu, Sunnyvale, CA (US);
Xiao-Yu Li, San Jose, CA (US);
Sunil D. Mehta, San Jose, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method of manufacturing a semiconductor device with reduced shallow trench isolation defects and stress is disclosed. The disclosed method begins by providing a silicon substrate including a capping layer. A plurality of isolation trenches are then etched through the capping layer and into the silicon substrate to form a plurality of isolation regions in the silicon substrate. The isolation trenches are then filled with an oxide layer. The oxide layer and the capping layer are then polished back using techniques known in the art. After polishing, the semiconductor device is annealed between a temperature range of about 1150° C. to about 1200° C.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile