The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2002
Filed:
Jun. 29, 1998
Qi Xiang, Santa Clara, CA (US);
Xiao-yu Li, San Jose, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
An electrically erasable programmable read only memory (EEPROM) comprises a stacked dielectric tunnel oxide region formed between a write transistor and a sense transistor. The tunnel oxide region permits electron tunneling from a floating gate electrode of a sense transistor to the write transistor. The tunnel oxide region includes a first region that has a single dielectric layer optimized for data retention requirements. The tunnel oxide region also includes a second region having a stacked structure optimized for programming speed and comprising a relatively thin first dielectric layer and a second high-K dielectric layer formed thereon.