Sunnyvale, CA, United States of America

Hyeon-Seag Kim


Average Co-Inventor Count = 1.3

ph-index = 4

Forward Citations = 190(Granted Patents)


Company Filing History:


Years Active: 2000-2002

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5 patents (USPTO):Explore Patents

Title: Hyeon-Seag Kim: Innovator in Semiconductor Technology

Introduction

Hyeon-Seag Kim is a prominent inventor based in Sunnyvale, CA, known for his significant contributions to semiconductor technology. With a total of five patents to his name, Kim has developed innovative methods that enhance the performance and reliability of semiconductor devices.

Latest Patents

One of Kim's latest patents is titled "Process for manufacturing shallow trenches filled with dielectric material having low mechanical stress." This invention provides methods for reducing mechanical stresses within dielectric layers that fill gaps in shallow trench isolation (STI) regions on semiconductor wafers. The methods include the sequential deposition of alternating layers of dielectric materials with tensile and compressive stress. This innovation allows for the adjustment of residual stress in a dielectric film by controlling the thicknesses of the alternating layers, resulting in bilayers with minimal overall stress. The reduced stress within and between trenches decreases defects in shallow isolation materials, leading to fewer source-drain and trench-trench short circuits. Consequently, the improved electrical and mechanical properties of the filling materials enable the manufacture of more reliable and smaller semiconductor devices.

Another notable patent is the "Gate insulator process for nanometer MOSFETS." This invention discloses methods for manufacturing insulating materials and semiconductor devices that incorporate films with high dielectric constants. The high-dielectric constant material is deposited on a semiconductor surface treated to prevent interfacial oxide formation. The methods involve implanting nitrogen ions through a sacrificial oxide layer, creating a nitrided silicon substrate beneath the sacrificial oxide. After removing the sacrificial oxide, layers of high dielectric constant materials can be deposited without forming interfacial oxide. This results in insulating films that are thinner than conventional films, allowing for increased device density, efficiency, and reduced manufacturing costs.

Career Highlights

Hyeon-Seag Kim has made significant strides in the semiconductor industry through his work at Vantis Corporation. His innovative approaches have not only advanced the field but have also contributed to the development of more efficient semiconductor products.

Collaborations

Kim collaborates with Sunil D Mehta, leveraging their combined expertise to push the boundaries of semiconductor technology.

Conclusion

Hyeon-Seag Kim's contributions to semiconductor technology through his innovative patents have made a lasting impact on the industry. His work continues to pave the way for advancements in device performance and manufacturing efficiency.

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