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For the Inventor, By the Inventor

Milpitas, CA, United States of America

T-Ram Semiconductor, Inc.


USPTO Granted Patents = 58

% Expired Patents = 98.3

Forward Citations = 1,170

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27 inventors (with patents filed for the assignee):

goldMedal Farid Nemati (27 out of 78 patents)

silverMedal Scott T Robins (19 out of 63 patents)

bronzeMedal Kevin J Yang (16 out of 18 patents)

4.  Andrew Edward Horch (16 out of 94 patents)

5.  Hyun-Jin Cho (10 out of 45 patents)

6.  Rajesh N Gupta (5 out of 28 patents)

7.  James D Plummer (5 out of 19 patents)

8.  Robert Homan Igehy (4 out of 7 patents)

9.  Zachary K Lee (4 out of 6 patents)

10.  Maxim Ershov (3 out of 11 patents)

11.  Richard Stephen Roy (3 out of 61 patents)

12.  Marc Laurent Tarabbia (3 out of 35 patents)

13.  Rajesh Chopra (2 out of 10 patents)

14.  Srinivasa Banna (2 out of 32 patents)

15.  Fred N Hause (2 out of 141 patents)


Core Competencies:
Thyristor-Based Memory
Dynamic Data Restore
Electrostatic Coupling
Memory Cell Design
Integrated Circuits
Silicon-On-Insulator
Parasitic Transistors
Trench Isolation
High Ion/Ioff SOI MOSFET
Sense Amplifiers
Programmable Built-In Self-Test
Gettering Contaminants

58 patents:

1. 8441881 - Tracking for read and inverse write back of a group of thyristor-based memory cells (2013-05-14),
2. 8324656 - Reduction of electrostatic coupling for a thyristor-based memory cell (2012-12-04),
3. 8174046 - Reducing effects of parasitic transistors in thyristor-based memory using local thinning or implanting (2012-05-08),
4. 8093107 - Thyristor semiconductor memory and method of manufacture (2012-01-10),
5. 8069385 - Programmable built-in self-test architecture (2011-11-29),
6. 8017998 - Gettering contaminants for integrated circuits formed on a silicon-on-insulator structure (2011-09-13),
7. 7969777 - Thyristor-based memory array having lines with standby voltages (2011-06-28),
8. 7968381 - Fin thyristor-based semiconductor device (2011-06-28),
9. 7961540 - Dynamic data restore in thyristor-based memory device (2011-06-14),
10. 7897440 - Vertical thyristor-based memory with trench isolation and method of fabrication thereof (2011-03-01),
11. 7894256 - Thyristor based memory cell (2011-02-22),
12. 7894255 - Thyristor based memory cell (2011-02-22),
13. 7893456 - Thyristor-based memory and its method of operation (2011-02-22),
14. 7859929 - Sense amplifiers (2010-12-28),
15. 7859012 - Thyristor-based semiconductor memory device with back-gate bias (2010-12-28),
Company Overview
T-Ram Semiconductor, Inc., based in Milpitas, California, specializes in innovative memory solutions utilizing thyristor-based technology. The company focuses on developing advanced memory architectures that enhance data retention and performance through dynamic data restore techniques and electrostatic coupling. Its expertise extends to memory cell design, integrated circuits, and silicon-on-insulator technology, positioning T-Ram at the forefront of semiconductor advancements. The organization is committed to addressing the evolving needs of the memory market with cutting-edge solutions.
Profile summary synthesized from public USPTO records and patent filings.

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USPTO Data Jan 1 1976 - Oct 20 2026

58 Patents

#40 in Milpitas, CA

#1,445 in California

#6,161 in US

#12,407 in the World

Milpitas, CA (US)
Milpitas, CA, United States of America

T-Ram Semiconductor, Inc.

Forward Citations = 1,170

27 inventors:

goldMedal Farid Nemati (27 out of 78 patents)

silverMedal Scott T Robins (19 out of 63 patents)

bronzeMedal Kevin J Yang (16 out of 18 patents)

4.  Andrew Edward Horch (16 out of 94 patents)

5.  Hyun-Jin Cho (10 out of 45 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: T-Ram Semiconductor, Inc.. Retrieved from https://idiyas.com/company/t-ram-semiconductor

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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