The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2011
Filed:
Dec. 01, 2008
Applicants:
Hyun-jin Cho, Palo Alto, CA (US);
Farid Nemati, Redwood City, CA (US);
Inventors:
Hyun-Jin Cho, Palo Alto, CA (US);
Farid Nemati, Redwood City, CA (US);
Assignee:
T-RAM Semiconductor, Inc., Mountain View, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/39 (2006.01);
U.S. Cl.
CPC ...
Abstract
A new memory cell can contain only a single thyristor. There is no need to include an access transistor in the cell. In one embodiment, the thyristor is a thin capacitively coupled thyristor. The new memory cell can be connected to word, bit, and control lines in several ways to form different memory arrays. Timing and voltage levels of word, bit and control lines are disclosed.