Hyun-Jin Cho

USPTO Granted Patents = 45 (Patent Applications = 1)

Average Co-Inventor Count = 2.3

ph-index = 14

Forward Citations = 929(Granted Patents)

Location History:

Palo Alto, CA (US) (2002 - 2017)
Guilderland, NY (US) (2016 - 2020)

Company Filing History:

T-ram Semiconductor, Inc.

International Business Machines Corporation

patents

5. 7 out of 12,867

Advanced Micro Devices Corporation

patents

6. 1 out of 2,867

Stmicroelectronics Gmbh

patents

where one patent can have more than one assignee

Years Active: 2002-2020

where 'Filed Patents' based on already Granted Patents

45 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 10586855 - Spacer chamfering gate stack scheme (2020-03-10),

2. 10002940 - Spacer chamfering gate stack scheme (2018-06-19),

3. 9853117 - Spacer chamfering gate stack scheme (2017-12-26),

4. 9780185 - Spacer chamfering gate stack scheme (2017-10-03),

5. 9691971 - Integrated circuits including magnetic tunnel junctions for magnetoresistive random-access memory and methods for fabricating the same (2017-06-27),

6. 9666791 - Topological method to build self-aligned MTJ without a mask (2017-05-30),

7. 9646969 - Spacer chamfering gate stack scheme (2017-05-09),

8. 9613958 - Spacer chamfering gate stack scheme (2017-04-04),

9. 9564440 - Spacer chamfering gate stack scheme (2017-02-07),

10. 9466491 - Methods of forming a semiconductor device with a spacer etch block cap and the resulting device (2016-10-11),

11. 9443775 - Lithography process monitoring of local interconnect continuity (2016-09-13),

12. 9269712 - Semiconductor device providing enhanced fin isolation and related methods (2016-02-23),

13. 9236557 - Magnetic tunnel junction between metal layers of a semiconductor device (2016-01-12),

14. 9190260 - Topological method to build self-aligned MTJ without a mask (2015-11-17),

15. 9129986 - Spacer chamfering for a replacement metal gate device (2015-09-08),

Title: Hyun-Jin Cho: Pioneering Innovations in Semiconductor Technology

Introduction:

Hyun-Jin Cho, a visionary inventor based in Palo Alto, CA, is renowned for his dedication to pushing the boundaries of technology and his relentless pursuit of innovation. With an impressive portfolio of 45 patents, Cho continues to inspire and shape the future of technological advancements in the semiconductor industry.

Latest Patents:

One of Cho's latest groundbreaking patents is the Spacer Chamfering Gate Stack Scheme. This method involves forming spacers on the sidewalls of replacement gate structures on a fin structure, introducing varying widths to enhance semiconductor device performance. By offsetting spacer surfaces and incorporating multiple spacer layers, Cho's innovative approach revolutionizes gate structure formation in semiconductor devices.

Career Highlights:

Throughout his career, Cho has made significant contributions to companies at the forefront of semiconductor technology. Having worked at GlobalFoundries Inc. and T-RAM Semiconductor Inc., Cho has honed his expertise in semiconductor device fabrication and design. His innovative solutions have propelled these companies to the forefront of technological advancements in the industry.

Collaborations:

Collaborating with talented individuals such as Farid Nemati and Scott T. Robins, Cho has leveraged his technical acumen and inventive spirit to drive collaborative projects to success. Together, they have tackled complex challenges in semiconductor technology, paving the way for new innovations and advancements in the field.

Conclusion:

Hyun-Jin Cho's pioneering spirit and relentless pursuit of innovation have established him as a standout figure in the world of inventors. His groundbreaking patents and collaborations reflect his unwavering commitment to pushing the boundaries of technology and shaping the future of the semiconductor industry. Cho's legacy continues to inspire future generations of inventors and innovators to strive for excellence and creativity in their pursuits.

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1 patent pending:

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2 patents pending (EPO):

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