The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2017

Filed:

Jun. 24, 2015
Applicant:

Globalfoundries, Inc., Grand Cayman, KY;

Inventors:

Seowoo Nam, Delmar, NY (US);

Ming He, Slingerlands, NY (US);

Craig Child, Wilton, NY (US);

Hyun-Jin Cho, Palo Alto, CA (US);

Assignee:

GLOBALFOUNDRIES, INC., Grand Cayman, KY;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 43/12 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 27/228 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Integrated circuits that include a magnetic tunnel junction (MTJ) for a magnetoresistive random-access memory (MRAM) and methods for fabricating such integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes forming a lower electrode on a metal interconnect. The metal interconnect is disposed above a semiconductor substrate and is aligned with a normal axis that is substantially perpendicular to the semiconductor substrate. The lower electrode includes a conductive metal plug. A MTJ stack is formed on the lower electrode aligned with the normal axis.


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