The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2015
Filed:
Jun. 28, 2013
Globalfoundries Inc., Grand Cayman, KY;
Hui Zang, Albany, NY (US);
Hyun-Jin Cho, Palo Alto, CA (US);
GlobalFoundries Inc., Grand Cayman, KY;
Abstract
Approaches for spacer chamfering in a replacement metal gate (RMG) device are provided. Specifically, a semiconductor device is provided with a set of fins formed from a substrate; a silicon-based layer conformally deposited over the set of fins; an etch-stop layer (e.g., titanium nitride (TiN)) formed over the silicon-based layer, the etch-stop layer being selective to at least one of: silicon, oxide, and nitride; a set of RMG structures formed over the substrate; a set of spacers formed along each of the set of RMG structures, wherein a vertical layer of material from each of the set of spacers is removed selective to the etch-stop layer. By chamfering each sidewall spacer, a wider area for subsequent work-function (WF) metal deposition is provided. Meanwhile, each transistor channel region is covered by the etch-stop layer (e.g., TiN), which maintains the original gate critical dimension during reactive ion etching.