The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2012
Filed:
Nov. 14, 2008
Farid Nemati, Redwood City, CA (US);
Scott Robins, San Jose, CA (US);
Kevin J. Yang, Santa Clara, CA (US);
Farid Nemati, Redwood City, CA (US);
Scott Robins, San Jose, CA (US);
Kevin J. Yang, Santa Clara, CA (US);
T-RAM Semiconductor, Inc., Mountain View, CA (US);
Abstract
A thyristor based semiconductor device includes a thyristor having cathode, P-base, N-base and anode regions disposed in electrical series relationship. The N-base region for the thyristor has a cross-section that defines an inverted 'T' shape, wherein a buried well in semiconductor material forms is operable as a part of the N-base. The stem to the inverted 'T' shape extends from the upper surface of the semiconductor material to the buried well. The P-base region for the thyristor extends laterally outward from a side of the stem that is opposite the anode region of the thyristor, and is further bounded between the buried well and a surface of the semiconductor material. A thinned portion for the N-base is defined between the cathode region of the thyristor and the buried well, and may include supplemental dopant of concentration greater than that for some other portion of the N-base.