Tracking for read and inverse write back of a group of thyristor-based memory cells

Abstract

Method and integrated circuit for tracking for read and inverse write back of a group of thyristor-based memory cells is described. The method includes: reading the group of memory cells to obtain read data, and writing back opposite data states for the read data to the group of memory cells. The group of memory cells includes data cells and at least one check cell for check data, where the check data indicates polarity of the read data. The integrated circuit includes a grouping of memory cells of an array of memory cells including data cells and at least one check cell, and sense amplifiers. The at least one check cell is to track inversion/non-inversion status of the data cells associated therewith, and the sense amplifiers are coupled to obtain read information from the grouping and to write back data states opposite of those of the read information.