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For the Inventor, By the Inventor

Portola Valley, CA, United States of America

James D Plummer

This inventor holds 19 USPTO granted patents, primarily in Thyristor Devices. Top assignees: Leland Stanford Junior University, T-Ram Semiconductor, Inc., United States of America as Represented by the Secretary of the Air Force. Active years: 1976-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: James D Plummer. Retrieved from https://idiyas.com/inventor/james-d-plummer

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 19

% Patents Active = 42.1

Average Co-Inventor Count = 2.5

ph-index = 10

Forward Citations = 775(Granted Patents)


Location History:

  • Mountain View, CA (US) (1976 - 1985)
  • Portola Valley, CA (US) (1989 - 2019)

Company Filing History:

goldMedal13 out of 5,515 
 
Leland Stanford Junior University
 patents
silverMedal5 out of 58 
 
T-Ram Semiconductor, Inc.
 patents
bronzeMedal1 out of 5,095 
 
United States of America as Represented by the Secretary of the Air Force
 patents

Years Active: 1976-2019

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Areas of Expertise:
Thyristor Device
Semiconductor Fabrication
Negative Differential Resistance
Single Metal Crystals
High-Density Memories
Carbon Lifetime Adjustment
Crystalline-Type Device
Transistor
Ultrasonic Transducer
Power Switches
Memory Device
Acoustic Wave Correlator
19 patents (USPTO):Explore Patents
1. 10435814 - Single metal crystals (2019-10-08),
2. 7858449 - Thyristor device with carbon lifetime adjustment implant and its method of fabrication (2010-12-28),
3. 7749872 - Crystalline-type device and approach therefor (2010-07-06),
4. 7592642 - Thyristor-based semiconductor device with indium-carbon implant and method of fabrication (2009-09-22),
5. 7508701 - Negative differential resistance devices and approaches therefor (2009-03-24),
6. 7498243 - Crystalline-type device and approach therefor (2009-03-03),
7. 7488626 - Thyristor device with carbon lifetime adjustment implant and its method of fabrication (2009-02-10),
8. 7365373 - Thyristor-type memory device (2008-04-29),
9. 7195959 - Thyristor-based semiconductor device and method of fabrication (2007-03-27),
10. 7075122 - Thyristor device with carbon lifetime adjustment implant and its method of fabrication (2006-07-11),
11. 6967358 - Thyristor-type memory device (2005-11-22),
12. 6727529 - Semiconductor capacitively-coupled NDR device and related applications in high-density high-speed memories and in power switches (2004-04-27),
13. 6528356 - Manufacture of semiconductor capacitively-coupled NDR device for applications such as high-density high-speed memories and power switches (2003-03-04),
14. 6448586 - Semiconductor current-switching device having operational enhancer and method therefor (2002-09-10),
15. 6229161 - Semiconductor capacitively-coupled NDR device and its applications in high-density high-speed memories and in power switches (2001-05-08),

Title: The Innovative Journey of James D. Plummer

Introduction: James D. Plummer, a distinguished inventor hailing from Portola Valley, CA, has made significant contributions to the field of technology and innovation.

Latest Patents: James D. Plummer holds several patents in the realm of semiconductor devices and advanced electronics, showcasing his expertise and creativity in the industry.

Career Highlights: With a career spanning over three decades, James D. Plummer has been a trailblazer in the development of cutting-edge technologies, revolutionizing the way we interact with electronics on a daily basis.

Collaborations: Throughout his career, James D. Plummer has collaborated with leading tech companies, research institutions, and universities, fostering a culture of innovation and pushing the boundaries of what is possible in the world of technology.

Conclusion: James D. Plummer's dedication to innovation and his relentless pursuit of excellence have solidified his position as a visionary inventor, shaping the future of technology for generations to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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