The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2007
Filed:
Oct. 04, 2004
James D. Plummer, Portola Valley, CA (US);
Zachary K. Lee, Irvine, CA (US);
Kevin J. Yang, Santa Clara, CA (US);
Farid Nemati, Redwood City, CA (US);
James D. Plummer, Portola Valley, CA (US);
Zachary K. Lee, Irvine, CA (US);
Kevin J. Yang, Santa Clara, CA (US);
Farid Nemati, Redwood City, CA (US);
T-Ram Semiconductor, Inc., Milpitas, CA (US);
Abstract
A thyristor-based semiconductor memory device may comprise at least a region thereof, e.g., a p-base region, having high ionization energy impurity, such as a dopant. This high ionization energy impurity within a base region may be operable to compensate for a gain-versus-temperature dependence of a constituent bipolar transistor of the thyristor element of a thyristor-based memory device. In particular embodiments, the high ionization energy impurity may include a donor and/or acceptor in silicon.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile