The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2009

Filed:

Nov. 29, 2006
Applicants:

Yue Liang, Beacon, NY (US);

Kailash Gopalakrishnan, San Jose, CA (US);

Peter Griffin, Woodside, CA (US);

James D. Plummer, Portola Valley, CA (US);

Inventors:

Yue Liang, Beacon, NY (US);

Kailash Gopalakrishnan, San Jose, CA (US);

Peter Griffin, Woodside, CA (US);

James D. Plummer, Portola Valley, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 5/06 (2006.01); H01L 29/74 (2006.01);
U.S. Cl.
CPC ...
Abstract

Negative differential resistance devices are implemented to facilitate current flow under different operating conditions. According to an example embodiment of the present invention, an NDR device is arranged for selective passage of current through relatively high tunneling efficiency regions and relatively low tunneling efficiency regions. In some applications, a gate is used to accumulate carriers to facilitate the passage of current that is predominantly one of tunneling current and generation current, respectively, by controlling the passage of current through a relatively high tunneling efficiency region and a relatively low tunneling efficiency region. In some implementations, the NDR device is arranged to mitigate leakage in a storage device using a two-terminal connection.


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