The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2009
Filed:
Apr. 04, 2006
Applicants:
Srinivasa R. Banna, San Jose, CA (US);
James D. Plummer, Portola Valley, CA (US);
Inventors:
Srinivasa R. Banna, San Jose, CA (US);
James D. Plummer, Portola Valley, CA (US);
Assignee:
T-RAM Semiconductor, Inc., Milpitas, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/72 (2006.01);
U.S. Cl.
CPC ...
Abstract
A thyristor-based memory device may comprise two base regions of opposite type conductivity formed between a cathode-emitter region and an anode-emitter region. A junction defined between the p-base region and the cathode-emitter region of the thyristor may be 'treated' with a high ionization energy acceptor such as indium in combination with carbon as an activation assist species. These two implants may form complexes that may extend across the junction region.