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For the Inventor, By the Inventor

Nuremberg, Germany

Sicrystal Gmbh


USPTO Granted Patents = 16


Trademarks = 1

Forward Citations = 4

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11 inventors (with patents filed for the assignee):

goldMedal Michael Vogel (16 out of 22 patents)

silverMedal Bernhard Ecker (10 out of 10 patents)

bronzeMedal Matthias Stockmeier (10 out of 11 patents)

4.  Arnd-Dietrich Weber (10 out of 10 patents)

5.  Ralf Müller (9 out of 9 patents)

6.  Erwin Schmitt (5 out of 6 patents)

7.  Ralph-Uwe Barz (2 out of 3 patents)

8.  Dominik Bannspach (2 out of 2 patents)

9.  Philipp Schuh (2 out of 2 patents)

10.  Ralf Mueller (1 out of 2 patents)

11.  Kuniyoshi Okamoto (1 out of 9 patents)

12.  Kuniyoshi Okamoto (0 patent)


16 patents:

1. 12723327 - System for manufacturing a high-quality semiconductor single crystal, and method of manufacturing same (2026-09-01),
2. 12686943 - Crystal structure orientation in semiconductor semi-finished products and semiconductor substrates for fissure reduction and method of setting same (2026-07-21),
3. 12680190 - System for manufacturing a high-quality semiconductor single crystal, and method of manufacturing same (2026-07-14),
4. 12628388 - Monocrystalline SiC substrates having an asymmetrical geometry and method of producing same (2026-05-12),
5. 12610792 - Chamfered silicon carbide substrate and method of chamfering (2026-04-21),
6. 12460314 - Silicon carbide substrate and method of growing SiC single crystal boules (2025-11-04),
7. 12195878 - SiC crystals with an optimal orientation of lattice planes for fissure reduction and method of producing same (2025-01-14),
8. 12157955 - Method for simultaneously manufacturing more than one single crystal of a semiconductor material by physical vapor transport (2024-12-03),
9. 11781245 - Silicon carbide substrate and method of growing SiC single crystal boules (2023-10-10),
10. 11624124 - Silicon carbide substrate and method of growing SiC single crystal boules (2023-04-11),
11. 11560643 - System for efficient manufacturing of a plurality of high-quality semiconductor single crystals by physical vapor transport (2023-01-24),
12. 11515140 - Chamfered silicon carbide substrate and method of chamfering (2022-11-29),
13. 11479875 - System for horizontal growth of high-quality semiconductor single crystals by physical vapor transport (2022-10-25),
14. 11261536 - Production method and growth arrangement for producing a bulk SiC single crystal by arranging at least two insulation cylinder components to control a variation in a volume element density (2022-03-01),
15. 11236438 - Silicon carbide substrate and method of growing SiC single crystal boules (2022-02-01),
Company Overview
Sicrystal GmbH, based in Nuremberg, Germany, specializes in the development and manufacturing of advanced semiconductor materials, particularly silicon carbide (SiC) and gallium nitride (GaN). These materials are pivotal in enhancing the efficiency and performance of power electronics, which are crucial for applications in renewable energy, electric vehicles, and industrial automation. The company focuses on innovation in material science and engineering, contributing to the advancement of sustainable technologies and high-performance electronic systems.
Profile summary synthesized from public USPTO records and patent filings.

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USPTO Data Jan 1 1976 - Oct 13 2026

16 Patents

#27 in Nuremberg

#2,625 in Germany

#37,831 in the World

Nuremberg, DE
Nuremberg, Germany

Sicrystal Gmbh

Forward Citations = 4

11 inventors:

goldMedal Michael Vogel (16 out of 22 patents)

silverMedal Bernhard Ecker (10 out of 10 patents)

bronzeMedal Matthias Stockmeier (10 out of 11 patents)

4.  Arnd-Dietrich Weber (10 out of 10 patents)

5.  Ralf Müller (9 out of 9 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Sicrystal Gmbh. Retrieved from https://idiyas.com/company/sicrystal

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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