The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 2026

Filed:

Jun. 09, 2021
Applicant:

Sicrystal Gmbh, Nuremberg, DE;

Inventors:

Michael Vogel, Nuremberg, DE;

Erwin Schmitt, Grossenseebach, DE;

Arnd-Dietrich Weber, Forchheim, DE;

Ralph-Uwe Barz, Erlangen, DE;

Dominik Bannspach, Erlangen, DE;

Assignee:

SICRYSTAL GMBH, Nuremberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/06 (2006.01); C30B 33/00 (2006.01); C30B 29/40 (2006.01); C30B 29/48 (2006.01); H10D 62/40 (2025.01); H10D 62/83 (2025.01); H10F 71/00 (2025.01); H10P 14/20 (2026.01);
U.S. Cl.
CPC ...
C30B 29/06 (2013.01); C30B 33/00 (2013.01); C30B 29/40 (2013.01); C30B 29/48 (2013.01); H10D 62/405 (2025.01); H10D 62/83 (2025.01); H10F 71/1224 (2025.01); H10P 14/2905 (2026.01); H10P 14/2926 (2026.01); Y02E 10/547 (2013.01);
Abstract

Crystal structure orientation in semiconductor semi-finished products and semiconductor substrates for fissure reduction and method of setting same The present invention provides monocrystalline semiconductor semi-finished product and substrates having a predetermined orientation of its crystal structure relative to a central axis and a at least partially curved lateral surface of the semi-finished product or substrate that reduces or even eliminates the occurrence of cracks during mechanical processing, and a method of producing such semiconductor semi-finished products and/or substrates. In the predetermined orientation, a first crystallographic axis perpendicular to a set of first cleavage planes makes a first tilt angle with a plane transverse to the central axis, and a second crystallographic axis perpendicular to a set of second cleavage planes and to the first crystallographic axis makes a second tilt angle with said plane transverse to the central axis so that each set of parallel cleavage planes that are symmetrically equivalent to either the first or second cleavage planes are inclined relative to the central axis.


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