This inventor holds 2 USPTO granted patents and 1 published patent application. Top assignee: Sicrystal Gmbh. Active years: 2025-2026.
Company Filing History:
Years Active: 2025-2026
Title: Dominik Bannspach: Innovating SiC Crystal Production
Introduction: Dominik Bannspach is a remarkable inventor based in Erlangen, Germany. With a dedicated focus on the development of SiC crystals, he has made significant strides in reducing fissures during the production process. His innovative approach addresses a critical challenge in materials engineering and showcases his commitment to advancing technology in this field.
Latest Patents: Dominik has a notable patent titled "SiC crystals with an optimal orientation of lattice planes for fissure reduction and method of producing same." This invention provides monocrystalline 4H-SiC semi-finished products characterized by a specific orientation of their crystal structure. The orientation is designed to minimize or completely eliminate the occurrence of cracks or fissures during mechanical processing. The advantage of this patent lies in its ability to deliver high-quality semi-finished products, critical for various application areas requiring strong and reliable materials.
Career Highlights: Currently, Dominik is employed at Sicrystal GmbH, a company renowned for its advancements in silicon carbide technology. His role at the company allows him to work on innovative solutions that pave the way for enhanced manufacturing processes. With one patent to his name, Bannspach stands out as an inventor committed to ongoing research and refinement in the field of material sciences.
Collaborations: In his professional journey, Dominik collaborates closely with Michael Vogel, another key contributor at Sicrystal GmbH. Their partnership fosters an environment of creativity and innovation, allowing them to explore new frontiers in SiC crystal development. Together, they work on pushing the boundaries of what is possible with silicon carbide technologies.
Conclusion: Dominik Bannspach's contributions to the field of SiC crystal production exemplify the spirit of innovation. With his patent aimed at reducing fissures and optimizing the orientation of lattice planes, he plays a pivotal role in the advancement of materials engineering. His collaboration at Sicrystal GmbH further enhances his capacity to make impactful contributions to this evolving technology landscape.