The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2026
Filed:
Oct. 28, 2022
Sicrystal Gmbh, Nuremberg, DE;
Bernhard Ecker, Nuremberg, DE;
Ralf Müller, Zirndorf, DE;
Matthias Stockmeier, Egloffstein, DE;
Michael Vogel, Nuremberg, DE;
Arnd-Dietrich Weber, Forchheim, DE;
SiCrystal GmbH, Nuremberg, DE;
Abstract
The present invention relates to a chamfered silicon carbide substrate which is essentially monocrystalline, and to a corresponding method of chamfering a silicon carbide substrate. A silicon carbide substrate according to the invention comprises a main surface (), wherein an orientation of said main surface () is such that a normal vector ({right arrow over (O)}) of the main surface () includes a tilt angle with a normal vector ({right arrow over (N)}) of a basal lattice plane () of the substrate, and a chamfered peripheral region (), wherein a surface of the chamfered peripheral region includes a bevel angle with said main surface, wherein said bevel angle is chosen so that, in more than 75% of the peripheral region, normal vectors ({right arrow over (F)}_i) of the chamfered peripheral region () differ from the normal vector of the basal lattice plane by less than a difference between the normal vector of the main surface and the normal vector of the basal lattice plane of the substrate.