Matthias Stockmeier

This inventor holds 11 USPTO granted patents and 13 published patent applications and 5 EPO patents. Top assignees: Sicrystal Gmbh, Sicrystal Ag. Active years: 2017-2026.

USPTO Granted Patents = 11 (Patent Applications = 13)

% Patents Active = 100.0

EPO Patents = 5 (Patent Applications = 19)

Average Co-Inventor Count = 4.7

ph-index = 1

Forward Citations = 3(Granted Patents)

Location History:

Erlangen, DE (2017)
Egloffstein, DE (2021 - 2023)

Company Filing History:

Years Active: 2017-2026

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11 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12723327 - System for manufacturing a high-quality semiconductor single crystal, and method of manufacturing same (2026-09-01),

2. 12680190 - System for manufacturing a high-quality semiconductor single crystal, and method of manufacturing same (2026-07-14),

3. 12610792 - Chamfered silicon carbide substrate and method of chamfering (2026-04-21),

4. 12460314 - Silicon carbide substrate and method of growing SiC single crystal boules (2025-11-04),

5. 11781245 - Silicon carbide substrate and method of growing SiC single crystal boules (2023-10-10),

6. 11624124 - Silicon carbide substrate and method of growing SiC single crystal boules (2023-04-11),

7. 11515140 - Chamfered silicon carbide substrate and method of chamfering (2022-11-29),

8. 11261536 - Production method and growth arrangement for producing a bulk SiC single crystal by arranging at least two insulation cylinder components to control a variation in a volume element density (2022-03-01),

9. 11236438 - Silicon carbide substrate and method of growing SiC single crystal boules (2022-02-01),

10. 11041254 - Chamfered silicon carbide substrate and method of chamfering (2021-06-22),

11. 9732438 - Method for producing a vanadium-doped silicon carbide volume monocrystal, and vanadium-doped silicon carbide substrate (2017-08-15),

Title: The Innovative Mind of Matthias Stockmeier

Introduction: Matthias Stockmeier, an accomplished inventor from Egloffstein, Germany, has made significant contributions to the field of materials science, particularly in the development of silicon carbide substrates. With a total of seven patents to his name, his work focuses on enhancing mechanical and electrical properties for improved performance in advanced applications.

Latest Patents: Stockmeier's most recent invention involves a silicon carbide (SiC) substrate designed with superior mechanical and electrical characteristics. The invention outlines a method for producing bulk SiC crystals using a physical vapor transport growth system. The innovative substrate features an inner region that comprises at least 30% of the total surface area, surrounded by a ring-shaped peripheral region. Notably, the mean concentration of dopants in the inner region is carefully controlled to differ by at most 1-10 cm from that in the peripheral region, ensuring optimized performance.

Career Highlights: Throughout his career, Stockmeier has worked with notable companies such as Sicrystal GmbH and Sicrystal AG, where he has played a vital role in advancing silicon carbide technology. His expertise has driven progress in numerous projects, reinforcing his position as a leader in the field.

Collaborations: In his journey, Stockmeier has collaborated with talented individuals, including Michael Vogel and Bernhard Ecker. Their combined efforts have fostered innovation and the development of cutting-edge technologies within the sector.

Conclusion: Matthias Stockmeier stands out as a pivotal figure in the realm of silicon carbide research and development. His inventions and collaborative efforts continue to push the boundaries of material science, offering new possibilities for future advancements. With seven patents and a wealth of experience, Stockmeier's legacy is firmly established within the landscape of modern innovations.