The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2017
Filed:
Sep. 09, 2015
Sicrystal Ag, Nuremberg, DE;
SiCrystal AG, Nuernberg, DE;
Abstract
A silicon-carbide volume monocrystal is produced with a specific electrical resistance of at least 10Ωcm. An SiC growth gas phase is generated in a crystal growing area of a crucible. The SiC volume monocrystal grows by deposition from the SiC growth gas phase. The growth material is transported from a supply area inside the growth crucible to a growth boundary surface of the growing monocrystal. Vanadium is added to the crystal growing area as a doping agent. A temperature at the growth boundary surface is set to at least 2250° C. and the SiC volume monocrystal grows doped with a vanadium doping agent concentration of more than 5·10cm. The transport of material from the SiC supply area to the growth boundary surface is additionally influenced. The growing temperature at the growth boundary surface and the material transport to the growth boundary surface are influenced largely independently of one another.