The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2022
Filed:
Mar. 07, 2018
Sicrystal Gmbh, Nuremberg, DE;
Michael Vogel, Nuremberg, DE;
Bernhard Ecker, Nuremberg, DE;
Ralf Müller, Zirndorf, DE;
Matthias Stockmeier, Egloffstein, DE;
Arnd-Dietrich Weber, Forchheim, DE;
SICRYSTAL GMBH, Nuremberg, DE;
Abstract
The present invention relates to a silicon carbide (SiC) substrate with improved mechanical and electrical characteristics. Furthermore, the invention relates to a method for producing a bulk SiC crystal in a physical vapor transport growth system. The silicon carbide substrate comprises an inner region () which constitutes at least 30% of a total surface area of said substrate (), a ring shaped peripheral region () radially surrounding the inner region (), wherein a mean concentration of a dopant in the inner region () differs by at maximum 5·10cm, preferably 1·10cm, from the mean concentration of this dopant in the peripheral region ().