The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2026

Filed:

Jan. 29, 2024
Applicant:

Sicrystal Gmbh, Nuremberg, DE;

Inventors:

Bernhard Ecker, Nuremberg, DE;

Ralf Müller, Nuremberg, DE;

Philipp Schuh, Nuremberg, DE;

Matthias Stockmeier, Nuremberg, DE;

Michael Vogel, Nuremberg, DE;

Assignee:

SiCrystal GmbH, Nuremberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 23/06 (2006.01); C30B 29/36 (2006.01);
U.S. Cl.
CPC ...
C30B 23/066 (2013.01); C30B 29/36 (2013.01);
Abstract

The present invention relates to systems and methods for growing bulk semiconductor single crystals, and more specifically, for growing a bulk semiconductor single crystals, such as silicon carbide, based on physical vapor transport. A sublimation system for growing at least one single crystal of a semiconductor material by means of a sublimation growing process comprises a crucible () having a longitudinal axis () and comprising a fixing means for at least one seed crystal () and at least one source material compartment () for containing a source material (); a heating system being formed to generate an irregular temperature field around a circumference of the crucible at one or more defined heights along the longitudinal axis of the crucible; a rotary drive that is operable to cause a rotational movement of the fixing means around the longitudinal axis relative to the heating system.


Find Patent Forward Citations

Quick Actions:

Ecker, Bernhard. (2026). System for manufacturing a high-quality semiconductor single crystal, and method of manufacturing same (U.S. Patent No. 12723327). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12723327

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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